RJP4009ANS by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. RJP4009ANS

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 150A I(C), 400V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
VCEsat-Max (V)
9
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.8
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
6
Collector Current-Max (IC) (A)
150
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
1.2
Collector-emitter Voltage-Max (V)
400