RJP4003ASA-0-Q0 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. RJP4003ASA-0-Q0

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
6
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
1.5
Collector-emitter Voltage-Max (V)
400