RJP30H1DPP-M0-T2
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 360V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max30 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)30 A
- Power Dissipation-Max (Abs)20 W
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max360 V
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RJP30H1DPP-M0-T2
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RJP30H1DPP-M0-T2