RJK5013DPK-00-T0
Renesas Technology Corp.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 14A I(D), 500V, 0.465ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin (Sn) - Copper (Cu)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW LEAKAGE CURRENT
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)100
- Drain Current-Max (ID) (A)14
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)500
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)42
- Drain-source On Resistance-Max (ohm)0.465
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