RJK2055DPA-00-J0
Renesas Technology Corp.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 20A I(D), 200V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XDSO-N5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee4
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishNICKEL PALLADIUM GOLD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals5
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)30
- Drain Current-Max (ID) (A)20
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)40
- Drain-source On Resistance-Max (ohm)0.069
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RJK2055DPA-00-J0