RJK0355DSP-00-J0
Renesas Technology Corp.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 12A I(D), 30V, 0.0168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.8
- Drain Current-Max (ID) (A)12
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)96
- Drain-source On Resistance-Max (ohm)0.0168
0 suppliers available to buy or to bid for RJK0355DSP-00-J0
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
RJK0355DSP-00-J0
Send an RFQ
RJK0355DSP-00-J0