RJH65T04BDPM-A0#T2
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionIGBT 650V 30A TO-3PFP Built-In FRD
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- VCEsat-Max (V)1.95
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)65
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)60
- Gate-emitter Voltage-Max (V)30
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)195
- Collector Current-Max (IC) (A)60
- Operating Temperature-Max (Cel)175
- Gate-emitter Thr Voltage-Max (V)7
- Collector-emitter Voltage-Max (V)650
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Width15.5
- Length24.5
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RJH65T04BDPM-A0#T2