RJH60M2DPE-00-J3 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. RJH60M2DPE-00-J3

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
63
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
45
Gate-emitter Voltage-Max (V)
30
Turn-off Time-Nom (toff) (ns)
170
Collector Current-Max (IC) (A)
25
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
600