RJH60C9DPD-00-J2 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. RJH60C9DPD-00-J2

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
75 ns
Gate-emitter Voltage-Max
30 V
Turn-off Time-Nom (toff)
290 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
45 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED