RJH1CM5DPQ-E0#T2
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionIGBT for Inverter Applications
- Category
- ECCN5A002
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)58 ns
- Gate-emitter Voltage-Max30 V
- Turn-off Time-Nom (toff)225 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)30 A
- Power Dissipation-Max (Abs)260.4 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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