RHF1203CM
ROHM Semiconductor
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Indium Gallium Arsenide, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Power Gain-Min (Gp) (dB)9
- Drain Current-Max (ID) (A)0.06
- Transistor Element MaterialINDIUM GALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)4
- Operating Temperature-Max (Cel)125
- Power Dissipation Ambient-Max (W)0.2
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RHF1203CM
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RHF1203CM