RGTVX2TS65DGC13
ROHM Semiconductor
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 111A I(C), 650V V(BR)CES, N-Channel, TO-247
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- VCEsat-Max (V)1.9
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)319
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)72
- Gate-emitter Voltage-Max (V)30
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Nom (toff) (ns)184
- Collector Current-Max (IC) (A)111
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)7
- Collector-emitter Voltage-Max (V)650
- Time@Peak Reflow Temperature-Max (s)20
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RGTVX2TS65DGC13