RGT50NS65DGTL by ROHM Semiconductor | Sourcengine

ROHM Semiconductor RGT50NS65DGTL

Lifecycle status
Active
RoHS
RoHS compliant
Description
Trans IGBT Chip N-CH 650V 48A 194000mW 3-Pin(2+Tab) LPDS T/R
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
65
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
210
Collector Current-Max (IC) (A)
48
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
20