- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 4.3A I(D), 1000V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4.3 A
- DS Breakdown Voltage-Min1000 V
- Transistor Element MaterialSILICON
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RFP4N100
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RFP4N100