RFL2N05
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Field-Effect Transistor, 2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-205AF
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)2 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)30 pF
- DS Breakdown Voltage-Min50 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)8.3 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max8.33 W
- Drain-source On Resistance-Max0.95 ohm
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RFL2N05