RFL1N18 by NEW JERSEY SEMICONDUCTOR PRODUCTS INC | Sourcengine

NEW JERSEY SEMICONDUCTOR PRODUCTS INC RFL1N18

Lifecycle status
Active
Description
Power Field-Effect Transistor, 1A I(D), 180V, 3.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
8.33
Drain Current-Max (ID) (A)
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
55
DS Breakdown Voltage-Min (V)
180
Feedback Cap-Max (Crss) (pF)
25
Turn-off Time-Max (toff) (ns)
90
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
5
Drain-source On Resistance-Max (ohm)
3.65