RD70HUF2
Mitsubishi Electric Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)20 A
- Operating Temperature-Max175 Cel
- Power Dissipation-Max (Abs)300 W
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RD70HUF2
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RD70HUF2