RD35HUF2-G
Mitsubishi Electric Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)10
- Operating Temperature-Max (Cel)175
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RD35HUF2-G
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RD35HUF2-G