RD16HHF1
Mitsubishi Electric Corp.
- Lifecycle statusNRFND
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandHIGH FREQUENCY BAND
- Power Dissipation-Max (W)57
- Drain Current-Max (ID) (A)5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)50
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for RD16HHF1
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
RD16HHF1
Send an RFQ
RD16HHF1