RD15HVF1-101
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Dissipation-Max (W)48
- Drain Current-Max (ID) (A)4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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RD15HVF1-101