RD12MVS1-101
Mitsubishi Electric Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XQCC-N3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Dissipation-Max (W)50
- Drain Current-Max (ID) (A)4
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)50
- Operating Temperature-Max (Cel)150
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RD12MVS1-101