RBVQ2006P
Supertex, Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 0.41A I(D), 90V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CDIP-T14
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements4
- Number of Terminals14
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)0.41 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)55 ns
- Feedback Cap-Max (Crss)25 pF
- DS Breakdown Voltage-Min90 V
- Turn-off Time-Max (toff)60 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max5 ohm
- Pulsed Drain Current-Max (IDM)3 A
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RBVQ2006P