R8002CNDTL by ROHM Semiconductor | Sourcengine

ROHM Semiconductor R8002CNDTL

Lifecycle status
EOL
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 2A I(D), 800V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
69
Drain Current-Max (ID) (A)
2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
800
Feedback Cap-Max (Crss) (pF)
10
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
0.265
Pulsed Drain Current-Max (IDM) (A)
8
Drain-source On Resistance-Max (ohm)
4.3
Time@Peak Reflow Temperature-Max (s)
30