R6530ENXC7G by ROHM Semiconductor | Sourcengine

ROHM Semiconductor R6530ENXC7G

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
650V 30A TO-220FM, LOW-NOISE POW
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
86
Drain Current-Max (ID) (A)
30
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
230
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
730
Pulsed Drain Current-Max (IDM) (A)
90
Drain-source On Resistance-Max (ohm)
0.14
Time@Peak Reflow Temperature-Max (s)
30