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R6000ENHTB1

ROHM Semiconductor

R6000ENHTB1 Datasheet
ROHM Semiconductor R6000ENHTB1
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-G8
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    8
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    2
  • Drain Current-Max (ID) (A)
    0.5
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    600
  • Feedback Cap-Max (Crss) (pF)
    5
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    150
  • Power Dissipation Ambient-Max (W)
    2
  • Avalanche Energy Rating (Eas) (mJ)
    2.2
  • Pulsed Drain Current-Max (IDM) (A)
    1
  • Drain-source On Resistance-Max (ohm)
    8.8
  • Time@Peak Reflow Temperature-Max (s)
    30

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R6000ENHTB1