R1Q3A3636BBG-40R
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- DescriptionQDR SRAM, 1MX36, 0.35ns, CMOS, PBGA165
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeSEPARATE
- TechnologyCMOS
- Width (mm)15
- Length (mm)17
- JESD-30 CodeR-PBGA-B165
- Memory Width36
- Package CodeLBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeQDR SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Memory Organization1MX36
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.35
- Number of Words Code1M
- Memory Density (bits)37748736
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.46
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)1048576
- Standby Current-Max (A)0.35
- Standby Voltage-Min (V)1.7
- Supply Current-Max (mA)700
- Package Equivalence CodeBGA165,11X15,40
- Clock Frequency-Max (MHz)250
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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R1Q3A3636BBG-40R