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QS8888A-10DB

QUALITY SEMICONDUCTOR INC

QUALITY SEMICONDUCTOR INC QS8888A-10DB
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Technology
    CMOS
  • JESD-30 Code
    R-GDIP-T22
  • Memory Width
    4
  • Package Code
    DIP
  • Output Enable
    NO
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Memory IC Type
    CACHE SRAM
  • Operating Mode
    ASYNCHRONOUS
  • Number of Ports
    1
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Memory Organization
    16KX4
  • Number of Functions
    1
  • Number of Terminals
    22
  • Access Time-Max (ns)
    10
  • Number of Words Code
    16K
  • Memory Density (bits)
    65536
  • Package Body Material
    CERAMIC, GLASS-SEALED
  • Output Characteristics
    3-STATE
  • Supply Voltage-Max (V)
    5.5
  • Supply Voltage-Min (V)
    4.5
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    16384
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55

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QS8888A-10DB
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QS8888A-10DB