QPD1022S2
Qorvo, Inc
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, X Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-PQCC-N16
- ConfigurationSINGLE
- JESD-609 Codee4
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishGOLD
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals16
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)2.4 A
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM NITRIDE
- Peak Reflow Temperature (Cel)260
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QPD1022S2
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QPD1022S2