QPD1004SQ
Qorvo, Inc
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-N8
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- J-STD-609 Codee4
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishNICKEL PALLADIUM GOLD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Drain Current-Max (ID) (A)3.6
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM NITRIDE
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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QPD1004SQ