QPD0005SR
Qorvo, Inc
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-N6
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- J-STD-609 Codee4
- Operating ModeDEPLETION MODE
- Terminal FinishNICKEL PALLADIUM GOLD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandC BAND
- Power Gain-Min (Gp) (dB)16.8
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM NITRIDE
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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QPD0005SR
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QPD0005SR