QM200HC-M
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 200A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2 V
- JESD-30 CodeR-PUFM-X4
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUPPER
- Additional FeatureBUILT IN BIAS RESISTOR
- Fall Time-Max (tf)3000 ns
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)100
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)200 A
- Power Dissipation-Max (Abs)830 W
- Transistor Element MaterialSILICON
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QM200HC-M
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QM200HC-M