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QL78M6S-B

QUANTUM SEMICONDUCTOR INTERNATIONAL CO LTD

QUANTUM SEMICONDUCTOR INTERNATIONAL CO LTD QL78M6S-B
  • Shape
    ROUND
  • Size (mm)
    1.6
  • Configuration
    SINGLE WITH BUILT-IN PHOTO DIODE
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Number of Functions
    1
  • Peak Wavelength (nm)
    780
  • Output Power-Nom (mW)
    90
  • Semiconductor Material
    AlGaAs
  • Forward Current-Max (A)
    0.16
  • Optoelectronic Device Type
    LASER DIODE
  • Threshold Current-Max (mA)
    50
  • Operating Temperature-Max (Cel)
    60
  • Operating Temperature-Min (Cel)
    -10

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QL78M6S-B
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QL78M6S-B