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QL65E8SA

ROITHNER LASERTECHNIK GMBH

ROITHNER LASERTECHNIK GMBH QL65E8SA
  • Shape
    ROUND
  • Size (mm)
    1.6
  • Configuration
    SINGLE WITH BUILT-IN PHOTO DIODE
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Number of Functions
    1
  • Peak Wavelength (nm)
    658
  • Output Power-Nom (mW)
    7
  • Semiconductor Material
    AlGaAs
  • Forward Current-Max (A)
    0.045
  • Forward Voltage-Max (V)
    2.4
  • Optoelectronic Device Type
    LASER DIODE
  • Threshold Current-Max (mA)
    35
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -10

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QL65E8SA
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QL65E8SA