QID3310006 by Powerex Inc., U.S.A. | Sourcengine

Powerex Inc., U.S.A. QID3310006

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Insulated Gate Bipolar Transistor, 100A I(C), 3300V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X8
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1040
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
960
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
4500
Collector Current-Max (IC) (A)
100
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-50
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
3300
Screening Level / Reference Standard
IEC-60077-1; IEC-1287
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED