OSRAM Opto Semiconductors GmbH. Q65112A9350
  • Shape
    RECTANGULAR
  • Configuration
    SINGLE
  • Packing Method
    TR, 13 INCH
  • Peak Wavelength
    940 nm
  • Mounting Feature
    SURFACE MOUNT
  • Output Power-Nom
    3000 W
  • Spectral Bandwidth
    2 m
  • Forward Current-Max
    5 A
  • Forward Voltage-Max
    2.1 V
  • Number of Functions
    1
  • Semiconductor Material
    GaAs
  • Operating Temperature-Max
    110 Cel
  • Operating Temperature-Min
    -40 Cel
  • Optoelectronic Device Type
    LASER DIODE

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Q65112A9350
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Q65112A9350