PTB20111
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionEMITTER
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)20
- Power Dissipation-Max (W)159
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)25
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PTB20111