PRHMB150B12 by KYOCERA Corporation | Sourcengine

KYOCERA Corporation PRHMB150B12

Lifecycle status
Active-Unconfirmed
Description
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.4
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
5
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
730
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
400
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
800
Collector Current-Max (IC) (A)
150
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200