PPNGZ52F120B
Microsemi Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, P-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)300
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)33
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
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PPNGZ52F120B
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PPNGZ52F120B