PM100DHA120
Powerex Inc., U.S.A.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max3.8 V
- JESD-30 CodeR-PUFM-X13
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUPPER
- Additional FeatureCURRENT SENSE IGBT CHIP,DRIVE CIRCUITRY AND PROTECTION CIRCUITRY IN A MODULE
- Number of Elements2
- Number of Terminals13
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Operating Temperature-Max100 Cel
- Collector Current-Max (IC)100 A
- Power Dissipation-Max (Abs)780 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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PM100DHA120
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PM100DHA120