PJS6800_S2_00001
PANJIT International Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 3.9A I(D), 30V, 0.048ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)3.9
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)15.6
- Drain-source On Resistance-Max (ohm)0.048
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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