PJQ4548P-AU_R2_002A1
PANJIT International Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 43A I(D), 40V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeS-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)30
- Drain Current-Max (ID) (A)43
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)40
- Feedback Cap-Max (Crss) (pF)25
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)2.5
- Avalanche Energy Rating (Eas) (mJ)42
- Pulsed Drain Current-Max (IDM) (A)172
- Drain-source On Resistance-Max (ohm)0.0091
- Screening Level / Reference StandardAEC-Q101; IEC-61249; MIL-STD-750
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PJQ4548P-AU_R2_002A1