PHB65N06T
PHILIPS SEMICONDUCTORS
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 63A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)150
- Drain Current-Max (ID) (A)63
- Operating Temperature-Max (Cel)175
0 suppliers available to buy or to bid for PHB65N06T
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
PHB65N06T
Send an RFQ
PHB65N06T