P2HM755HA
NIHON INTER ELECTRONICS CORP
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 53A I(D), 500V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XUFM-X8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals8
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)53
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)500
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)150
- Drain-source On Resistance-Max (ohm)0.065
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P2HM755HA