OM60N10NK
OMNIREL CORP
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-3
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)130
- Drain Current-Max (ID) (A)60
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)720
- Pulsed Drain Current-Max (IDM) (A)180
- Drain-source On Resistance-Max (ohm)0.025
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OM60N10NK