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NX8501CC-BA

Renesas Electronics Corp.

Renesas Electronics Corp. NX8501CC-BA
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    1510
  • Semiconductor Material
    InGaAsP
  • Forward Current-Max (A)
    0.2
  • Forward Voltage-Max (V)
    2
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    65
  • Operating Temperature-Min (Cel)
    0

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NX8501CC-BA
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NX8501CC-BA