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NX6411GH

Renesas Electronics Corp.

Renesas Electronics Corp. NX6411GH
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    1490
  • Response Time-Max (s)
    2.0E-10
  • Semiconductor Material
    InGaAsP
  • Forward Current-Max (A)
    0.2
  • Forward Voltage-Max (V)
    1.6
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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NX6411GH
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NX6411GH