NX6342EP-AZ
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- Description310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s BASE-LR/LW Application
- Category
- ShapeROUND
- Size (mm)2
- ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
- Mounting FeatureTHROUGH HOLE MOUNT
- Number of Functions1
- Peak Wavelength (nm)1330
- Output Power-Nom (mW)15
- Response Time-Max (s)5.0E-11
- Semiconductor MaterialAlGaInAs
- Forward Current-Max (A)0.12
- Optoelectronic Device TypeLASER DIODE
- Threshold Current-Max (mA)30
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-5
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NX6342EP-AZ