Renesas Electronics Corp. NX6342EP
  • Shape
    ROUND
  • Size (mm)
    2
  • Configuration
    SINGLE WITH BUILT-IN PHOTO DIODE
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Number of Functions
    1
  • Peak Wavelength (nm)
    1330
  • Output Power-Nom (mW)
    15
  • Response Time-Max (s)
    5.0E-11
  • Semiconductor Material
    AlGaInAs
  • Forward Current-Max (A)
    0.12
  • Optoelectronic Device Type
    LASER DIODE
  • Threshold Current-Max (mA)
    30
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -5

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NX6342EP
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NX6342EP