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NX5521EH

Renesas Electronics Corp.

Renesas Electronics Corp. NX5521EH
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    1550
  • Response Time-Max (s)
    7.0E-10
  • Semiconductor Material
    InGaAsP
  • Forward Current-Max (A)
    0.15
  • Forward Voltage-Max (V)
    1.5
  • Spectral Bandwidth (nm)
    1.5
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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NX5521EH
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NX5521EH