NTE475
NTE Electronics Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-MUPM-D3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Case ConnectionEMITTER
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Dissipation-Max (W)11
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)1.5
- Collector-emitter Voltage-Max (V)18
- Power Dissipation Ambient-Max (W)11.5
- Collector-base Capacitance-Max (pF)20
- Transition Frequency-Nom (fT) (MHz)350
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NTE475